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| PHOTO IC Photo IC for laser beam synchronous detection S9703 series High sensitivity, high-speed response S9703 series photo IC uses a single-element high-speed PIN photodiode designed for laser beam synchronous detection. The current amplifier is available with two gain levels (6 times and 20 times) according to laser power to be used. Hamamatsu also provides S9684 series photo IC that uses a dual-element Si PIN photodiode ideal for high precision printing. www..com Features Applications l High sensitivity Current amplifier gain: 20 times (S9703) 6 times (S9703-01) l Digital output l Small package l Suitable for lead-free solder reflow l Active area: 2.84 x 0.5 mm l Print start timing detection for laser printers, digital copiers, fax machines, etc. s Absolute maximum ratings (Ta=25 C) Parameter Symbol Supply voltage Vcc Power dissipation *1 P Output voltage *2 Vo Output current Io Ro terminal current IRO Operating temperature Topr Storage temperature Tstg *1: Derate power dissipation at a rate of -4 mW/C above Ta=25 C. *2: Vcc=+0.5 V or less Value -0.5 to +7 300 -0.5 to +7 5 3 -25 to +80 -40 to +85 Unit V mW V mA mA C C s Electrical and optical characteristics (Ta=25 C, =780 nm, Vcc=5 V, Ro=5.1 k, unless otherwise noted) Parameter Symbol Condition Min. Typ. Current consumption Icc No input High level output voltage VOH IOH=4 mA 4.6 Low level output voltage VOL IOL=4 mA *3 S9703 17 22 Threshold input power PTH S9703-01 60 75 S9703 H L propagation tPHL delay time S9703-01 PI=66 W (S9703) S9703 L H propagation PI=225 W (S9703-01) tPLH Duty ratio 1:1 delay time S9703-01 CL=15 pF, *4 Rise time tr 4 Fall time tf 4 Maximum input power PI Max. *3: PI=66 W (S9703), PI=225 W (S9703-01) *4: Measured with a pulse-driven laser diode. Input light-pulse rise time and fall time are 1 ns or less. 100 % INPUT LIGHT INTENSITY tPHL tPLH 90 % OUTPUT 1.5 V 10 % tf tr KPICC0112EA Max. 1.5 0.3 27 90 200 150 250 200 7 7 PTH x 5 Unit mA V V W ns ns ns W 50 % 0% 1 Photo IC for laser beam synchronous detection s Block diagram Vcc Vref 0.1 F 5V S9703 series CURRENT AMPLIFIER PD Vo Ro EXTERNAL GAIN RESISTANCE Ro GND www..com KPICC0113EA s Fumction S9703 series photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally connected to the IC chip as shown in the block diagram. S9703 series should be used with terminal Ro connected to an external gain resistance Ro. A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and, after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages VRO at terminal Ro is given by the following expression. VRO=A x S x PI x Ro [V] A: Current amplifier gain (S9703: 20 times, S9703-01: 6 times) S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm) PI: Input power [W] Ro: External gain resistance []; usable range 2 k to 10 k VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 1 V) so the output Vo is "High" when VRO < Vref or "Low" when VRO > Vref. We recommend using S9703 series under the operating conditions that VRO is 2 to 3 V. s Dimensional outline (unit: mm) 3.2 0.2 (INCLUDING BURR) 0.67 (CENTER OF ACTIVE AREA) 0.5 0.15 (CENTER OF ACTIVE AREA) PHOTOSENSITIVE SURFACE 3.4 MIRROR AREA RANGE 0.8 0.8 0.8 0.8 (10 x) 0.4 4.2 0.2 (10 x) 0.3 4.0 * 1.0 0.4 3.0 * 1.0 0.4 0.05 0.35 5.0 0.3 0.45 0.3 3.0 * 2.8 2.4 MIRROR AREA RANGE 0.45 0.3 PHOTOSENSITIVE SURFACE 0.75 1.3 0.15 0.1 0.1 Tolerance unless otherwise noted: 0.1, 2 Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X, Y0.2, 2 Vcc NC OUT GND Ro GND GND GND GND GND KPICA0058EA 2.9 3.0 * Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4.0 * 3.8 3.9 2.84 Cat. No. KPIC1058E02 Aug. 2007 DN 2 |
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